Difference Between SiC Wafer and Sintered Silicon Carbide (SSiC)
Silicon Carbide (SiC) is a versatile material used in both semiconductor applications and wear-resistant components. However, there are key differences between SiC Wafer and Sintered Silicon Carbide (SSiC) in terms of crystal structure, electrical conductivity, manufacturing processes, and applications. Below is a detailed comparison:
1. Material Applications
SiC Wafer (Silicon Carbide Wafer)
• Used in the semiconductor industry as a third-generation semiconductor material.
• Commonly applied in power electronics, RF components, and high-temperature electronic devices.
• Essential for SiC MOSFETs, SiC Schottky diodes (SBDs), and IGBTs.
Sintered Silicon Carbide (SSiC)
• Mainly used in mechanical, chemical, and aerospace industries.
• deal for wear-resistant components, sealing rings, nozzles, and heat exchangers.
2. Manufacturing Process
SiC Wafer (Silicon Carbide Semiconductor Production)
• Produced through Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD), or Liquid Phase Epitaxy (LPE).
• Requires precision slicing, polishing, and epitaxial growth to meet semiconductor-grade standards.
Sintered Silicon Carbide (SSiC) Production
• Manufactured using powder metallurgy, where SiC powder is sintered at over 2000°C under a protective atmosphere without external pressure.
• The process is optimized for wear-resistant components rather than semiconductor applications.
3. Microstructure Differences
SiC Wafer
• Single-crystal structure (4H-SiC or 6H-SiC polytypes), enabling high electron mobility and low defect density.
• Ideal for power electronics and RF semiconductor applications.
Sintered Silicon Carbide (SSiC)
• Polycrystalline structure, where SiC grains bond at crystal boundaries.
• Offers high strength but has poor electrical conductivity, making it unsuitable for semiconductor applications.
4. Electrical and Thermal Properties
SiC Wafer (Silicon Carbide Semiconductor)
• Wide bandgap (~3.26 eV), supporting high-voltage, high-temperature, and high-frequency power devices.
• Superior electrical conductivity, essential for SiC MOSFETs, IGBTs, and high-efficiency power electronics.
• High thermal conductivity (~490 W/m·K), ensuring efficient heat dissipation in power devices.
Sintered Silicon Carbide (SSiC) Properties
• Excellent insulation properties, with electrical resistivity >10¹² Ω·cm, making it ideal for non-conductive wear-resistant components.
• Lower thermal conductivity (120-200 W/m·K) compared to single-crystal SiC, but still effective in high-temperature industrial applications.
5. Mechanical Properties
SiC Wafer
• Due to its single-crystal structure, it is brittle and mainly used in power electronics rather than mechanical applications.
Sintered Silicon Carbide (SSiC)
• Extreme hardness (Mohs hardness >9.0), superior wear resistance, and excellent corrosion resistance.
• Widely applied in wear-resistant components, mechanical seals, bearings, and high-durability pump parts.
6. Application Fields
SiC Wafer (Silicon Carbide Semiconductor Applications)
• Power electronics: SiC MOSFETs, Schottky diodes (SiC SBDs), IGBTs
• RF components: Used in 5G base stations and high-frequency communication devices
• Aerospace electronics and high-temperature sensors
Sintered Silicon Carbide (SSiC) Applications:
• Mechanical seals and bearings
• Wear-resistant components such as nozzles, valves, and pump parts
• High-temperature furnace linings and heat exchangers
• Corrosion-resistant components for the chemical industry
• The primary difference between SiC Wafer and Sintered Silicon Carbide (SSiC) lies in their crystal structure, electrical conductivity, and application areas.
SiC Wafer is a single-crystal material used in semiconductor power electronics and RF devices.
Sintered Silicon Carbide (SSiC) is a polycrystalline material, best suited for mechanical and wear-resistant components.
By understanding these differences, engineers and businesses can choose the right silicon carbide material for their specific applications, whether in power electronics or wear-resistant components.
