Sic Silicon Carbide Ceramic Tray Plates For Icp Etching
- MSJ/SC-004
- silicon carbide
- customized
- 5 pcs per type
- ICP etching
The wafer carriers utilized in epitaxial growth processes are subjected to high temperatures and rigorous chemical cleaning. Mascera offers high-purity silicon carbide ceramic tray plates that provide exceptional heat resistance, uniform thermal distribution for consistent epi layer thickness and resistance, and robust chemical resistance.
Any inquiry please email info@mascera-tec.com or call +86 13860446139
Product detail
Non-oxide ceramic, silicon carbide ceramic (SiC) is an superhard material which has moh's hardness up to 9.5. Silicon carbide ceramic not only has excellent mechanical properties at room temperature, such as high bending strength, excellent oxidation resistance, good corrosion resistance, high wear resistance and low friction coefficient, but also outstanding mechanical properties (strength, creep resistance) at high temperature, the high temperature strength can be maintained up to 1600°C, which is the best among all ceramic materials. The oxidation resistance of silicon carbide ceramic is also the best among all non-oxide ceramics.
Mascera produced silicon carbide ceramics in two forms, sintered silicon carbide (SSiC) and reaction bonded silicon carbide (SiSiC).
Sintered silicon carbide ceramic is produced by utilizing high-purity and nano-grade raw powders, which are sintered at a high temperature ranging from 2100℃ to 2200℃. This sintering process leads to densification of the green body and approximately 20% shrinkage. On the other hand, reaction-bonded silicon carbide utilizes micron-sized silicon carbide powder and is sintered at a temperature range of 1450℃ to 1700℃. Unlike sintered silicon carbide, reaction-bonded silicon carbide does not undergo shape shrinkage during the sintering process.
The higher sintering temperature of sintered silicon carbide results in improved performance characteristics, including higher density, increased strength, and enhanced resistance to oxidation and corrosion. For applications that do not require such high-performance properties, reaction-bonded silicon carbide is a more cost-effective choice
Main properties of silicon carbide ceramic
High strength in high temperature
High-temperature oxidation resistance
Excellent wear resistance
Low thermal expansion coefficient
High thermal conductivity
Excellent thermal shock resistance
High hardness
Light weight because of low density
Good corrosion resistance
Typical applications of silicon carbide ceramics
Mechanial seal rings
Balls, seats, liners for valve
Kiln furniture
Heat exchangers
Fixed and moving turbine components
Grinding media
Military bulletproof plates
Components for burners
Ceramic bearings
Material Data Sheet
Item | Unit | Technical parameters | |
---|---|---|---|
Materail | -- | SSiC | SiSiC |
Color | -- | Black | Black |
Density | g/cm3 | 3.12 | 3.06 |
Water Absorption | % | 0 | 0 |
HRA | -- | ≥92 | ≥90 |
Modulus of Elasticity | Gpa | 400 | 350 |
Flexural Strength (@R.T.) | Mpa | 359 | 300 |
Compressive Strength (@R.T.) | Mpa | ≥2200 | 2000 |
Thermal Conductivity (@R.T.) | W/Mk | 110 | 100 |
Coefficient Of Thermal Expansion (20-1000℃) | 10-6/℃ | 4.0 | 4.0 |
Max. Working Temperature | ℃ | 1500 | 1300 |
Available shapes of silicon carbide ceramics
Ceramic rod / ceramic pin / ceramic plunger
Ceramic tube / ceramic bushing / ceramic sleeve
Ceramic ring / ceramic washer / ceramic spacer
Ceramic disc
Ceramic plate / ceramic block
Ceramic ball
Ceramic piston
Ceramic nozzle
Ceramic crucible
Other custom ceramic parts
Packing & Shipment
Package type | carton box with foam protection |
Payment terms | TT / Western Union / Paypal 50% payment in advanced and 50% before shipment |
Loading port | Xiamen, China |
Shipping way | By sea / air / door-to-door express |